Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R2K4P7ATMA1
- RS庫存編號:
- 222-4689
- 製造零件編號:
- IPN80R2K4P7ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD438.00
(不含稅)
TWD460.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,760 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 20 | TWD21.90 | TWD438.00 |
| 40 - 80 | TWD21.30 | TWD426.00 |
| 100 - 220 | TWD20.90 | TWD418.00 |
| 240 - 480 | TWD20.30 | TWD406.00 |
| 500 + | TWD18.80 | TWD376.00 |
* 參考價格
- RS庫存編號:
- 222-4689
- 製造零件編號:
- IPN80R2K4P7ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.3W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.3W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
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