Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1

RS庫存編號:: 215-2534
製造零件編號:: IPN95R2K0P7ATMA1
製造商:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1

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可享批量折扣

小計（1 包，共 20 件）*

TWD446.00

(不含稅)

TWD468.40

訂單超過 $1,300.00 免費送貨

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300 件準備從其他地點送貨
加上 6,720 件從 2026年1月28日起發貨

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單位	每單位	每包*
20 - 740	TWD22.30	TWD446.00
760 - 1480	TWD21.80	TWD436.00
1500 +	TWD20.40	TWD408.00

* 參考價格

RS庫存編號:: 215-2534
製造零件編號:: IPN95R2K0P7ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	7W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 7W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN95R2K0P7ATMA1

The Infineon 950V Cool MOS™ P7 series designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V Cool MOS™ C3, the 950V Cool MOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS™ P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class FOMRDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class SOT-223 RDS(on)

Best-in-class Cool MOS™ quality and reliability

Fully optimized portfolio

Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1

訂單超過 $1,300.00 免費送貨

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