Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1
- RS庫存編號:
- 222-4675
- 製造零件編號:
- IPD80R2K8CEATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD337.50
(不含稅)
TWD354.30
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | TWD22.50 | TWD337.50 |
| 30 - 75 | TWD21.90 | TWD328.50 |
| 90 - 225 | TWD21.30 | TWD319.50 |
| 240 - 465 | TWD20.90 | TWD313.50 |
| 480 + | TWD20.30 | TWD304.50 |
* 參考價格
- RS庫存編號:
- 222-4675
- 製造零件編號:
- IPD80R2K8CEATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | CoolMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series CoolMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
相關連結
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IPD90N08S405ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252