Infineon CoolMOS N-Channel MOSFET, 14 A, 900 V Enhancement, 3-Pin TO-220 IPA95R450P7XKSA1

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TWD3,281.00

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RS庫存編號:
222-4645
製造零件編號:
IPA95R450P7XKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

900V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

30W

Forward Voltage Vf

900mV

Maximum Operating Temperature

+150°C

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS Series MOSFET, 900V Drain Source Voltage, 14A Continuous Drain Current - IPA95R450P7XKSA1


This MOSFET is a high-voltage switching transistor designed for power conversion and control in demanding electrical systems. It is an N-channel enhancement-mode device supplied in a TO-220 package for surface mounting, intended for applications that require substantial blocking voltage and moderate continuous current while operating across a broad temperature range.

Features and Benefits:


• 900V drain-source rating enables high-voltage switching
• 14A continuous drain current supports substantial load current
• 450mΩ Rds(on) minimises conduction losses during operation
• 30W power dissipation allows sustained power handling
• 0.9V forward voltage reduces drop in body-diode conduction
• 30V gate-source rating permits typical gate-drive voltages

Applications


• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used for motor-drive front-end switching
• Can be used for high-voltage clamp circuits
• Used with thermal management in elevated-temperature systems

What thermal range can it tolerate during operation?


It operates across an ambient temperature range from -55°C to +150°C.

What mounting style is required for circuit assembly?


It is supplied in a TO-220 package intended for surface mounting.

How is gate drive constrained by the device ratings?


The maximum permissible gate-source voltage is 30V so gate drive must not exceed this.

What conduction characteristic affects switching losses?


The device has a maximum drain-source resistance of 450mΩ which influences conduction losses.

How much continuous current can it sustain under rated conditions?


It can carry a continuous drain current of up to 14A.

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