Infineon OptiMOS-TM5 N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1
- RS庫存編號:
- 222-4621
- 製造零件編號:
- BSC098N10NS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD164,500.00
(不含稅)
TWD172,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,000 件從 2026年10月12日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD32.90 | TWD164,500.00 |
| 25000 + | TWD32.20 | TWD161,000.00 |
* 參考價格
- RS庫存編號:
- 222-4621
- 製造零件編號:
- BSC098N10NS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-TM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-TM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
Infineon OptiMOS-TM5 Series MOSFET, 100V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - BSC098N10NS5ATMA1
This MOSFET is a high-voltage N-channel enhancement device designed for surface-mounted power switching in demanding temperature ranges. It supports high continuous currents and is intended for applications requiring efficient conduction and fast switching within industrial temperature extremes.
Features and Benefits:
• 100 V rating provides high-voltage switching capability
• 60 A continuous drain current enables heavy-load handling
• 9.8 mΩ low RDS reduces conduction losses
• 69 W power dissipation supports significant thermal load
• 22 nC typical gate charge enables responsive switching
• 20 V gate tolerance allows robust gate-drive margins
• 60 A continuous drain current enables heavy-load handling
• 9.8 mΩ low RDS reduces conduction losses
• 69 W power dissipation supports significant thermal load
• 22 nC typical gate charge enables responsive switching
• 20 V gate tolerance allows robust gate-drive margins
Applications
• Suitable for high-voltage DC-DC converter stages
• Ideal for motor-drive current stages in power electronics
• Used with synchronous buck regulators for efficiency
• Can be used for high-current switching in server power rails
• Suitable for battery management and power distribution modules
• Ideal for motor-drive current stages in power electronics
• Used with synchronous buck regulators for efficiency
• Can be used for high-current switching in server power rails
• Suitable for battery management and power distribution modules
What package is used and how does it affect board assembly?
It comes in an 8-pin TDSON surface-mount package which simplifies automated pick-and-place and soldering for Compact board layouts.
What thermal extremes can it operate within?
The device is specified to function from −55 °C up to 150 °C for ambient or junction operational scenarios.
How does the channel configuration influence control?
The N-type enhancement channel requires a positive gate-to-source voltage to conduct, allowing straightforward gate-drive design for switching applications.
What is the maximum gate voltage that should be applied?
The gate-to-source voltage must not exceed 20 V to avoid compromising the gate insulation and device integrity.
How does the package size support dense designs?
Its Compact footprint measuring 5.35 x 6.1 x 1.2 mm aids high-density layouts while maintaining power-handling capabilities.
相關連結
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-60 IAUCN10S5L094DATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN10S5L280DATMA1