DiodesZetex Dual DMT Type N-Channel MOSFET, 10.6 A, 30 V Enhancement, 8-Pin VDFN-3030
- RS庫存編號:
- 222-2867
- 製造零件編號:
- DMT3009UDT-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1500 件）*
TWD19,650.00
(不含稅)
TWD20,640.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 6000 | TWD13.10 | TWD19,650.00 |
| 7500 + | TWD12.90 | TWD19,350.00 |
* 參考價格
- RS庫存編號:
- 222-2867
- 製造零件編號:
- DMT3009UDT-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT | |
| Package Type | VDFN-3030 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.6nC | |
| Maximum Power Dissipation Pd | 16W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT | ||
Package Type VDFN-3030 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.6nC | ||
Maximum Power Dissipation Pd 16W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Ultra Low Gate Threshold Voltage
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
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