onsemi NTMFS0D6N Type N-Channel MOSFET, 433 A, 30 V Enhancement, 5-Pin DFN NTMFS0D6N03CT1G
- RS庫存編號:
- 221-6726
- 製造零件編號:
- NTMFS0D6N03CT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD336.00
(不含稅)
TWD352.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,060 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD67.20 | TWD336.00 |
| 10 - 95 | TWD65.60 | TWD328.00 |
| 100 - 245 | TWD63.80 | TWD319.00 |
| 250 - 495 | TWD62.20 | TWD311.00 |
| 500 + | TWD60.60 | TWD303.00 |
* 參考價格
- RS庫存編號:
- 221-6726
- 製造零件編號:
- NTMFS0D6N03CT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS0D6N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.3mm | |
| Width | 1.1 mm | |
| Length | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS0D6N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.62mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.3mm | ||
Width 1.1 mm | ||
Length 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 433 A of drain current with single N−channel. It improve inrush current management and also improve system efficiency.
Advanced package (5x6mm)
Ultra low RDS(on) to improve system efficiency
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