Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF
- RS庫存編號:
- 220-7494
- 製造零件編號:
- IRFR3504ZTRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD225.00
(不含稅)
TWD236.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 11,800 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | TWD22.50 | TWD225.00 |
| 500 - 990 | TWD21.90 | TWD219.00 |
| 1000 + | TWD21.60 | TWD216.00 |
* 參考價格
- RS庫存編號:
- 220-7494
- 製造零件編號:
- IRFR3504ZTRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 90W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-39-422 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 90W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-39-422 | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications
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