Infineon HEXFET Type N-Channel MOSFET & Diode, 24 A, 150 V Enhancement, 3-Pin TO-252

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RS庫存編號:
220-7491
製造零件編號:
IRFR24N15DTRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

45nC

Maximum Operating Temperature

175°C

Width

2.39 mm

Length

6.73mm

Standards/Approvals

Lead-Free

Height

6.22mm

Automotive Standard

No

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

Lead-Free

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