Infineon CoolMOS™ P7 N-Channel, 78 A, 650 V Enhancement, 4-Pin TO-247-4 IPZA60R120P7XKSA1
- RS庫存編號:
- 220-7467
- 製造零件編號:
- IPZA60R120P7XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 220-7467
- 製造零件編號:
- IPZA60R120P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4 | |
| Series | CoolMOS™ P7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4 | ||
Series CoolMOS™ P7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
The Infineon 600V Cool MOS P7 super junction (SJ) MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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