Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1
- RS庫存編號:
- 220-7380
- 製造零件編號:
- IPB033N10N5LFATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD319.00
(不含稅)
TWD334.96
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD159.50 | TWD319.00 |
| 250 - 498 | TWD156.00 | TWD312.00 |
| 500 + | TWD146.00 | TWD292.00 |
* 參考價格
- RS庫存編號:
- 220-7380
- 製造零件編號:
- IPB033N10N5LFATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
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