Infineon CoolMOS P7 Type N-Channel MOSFET, 16 A, 650 V Enhancement, 3-Pin TO-220 IPA60R600P7XKSA1

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小計(1 包,共 10 件)*

TWD287.00

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TWD301.40

(含稅)

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每單位
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10 - 10TWD28.70TWD287.00
20 - 90TWD28.00TWD280.00
100 - 240TWD27.30TWD273.00
250 - 490TWD26.70TWD267.00
500 +TWD25.80TWD258.00

* 參考價格

包裝方式:
RS庫存編號:
219-5983
製造零件編號:
IPA60R600P7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMO P7 optimized superjunction MOSFETs merging high energy efficiency with ease-of-use is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS 7th generation platform ensure its high efficiency.

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

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