Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS庫存編號:
- 218-3102
- 製造零件編號:
- IRF6775MTRPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD349.00
(不含稅)
TWD366.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,380 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1190 | TWD34.90 | TWD349.00 |
| 1200 - 2390 | TWD34.00 | TWD340.00 |
| 2400 + | TWD31.90 | TWD319.00 |
* 參考價格
- RS庫存編號:
- 218-3102
- 製造零件編號:
- IRF6775MTRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Height | 0.68mm | |
| Standards/Approvals | No | |
| Length | 4.85mm | |
| Width | 3.95 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Height 0.68mm | ||
Standards/Approvals No | ||
Length 4.85mm | ||
Width 3.95 mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
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