Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 IRF3710STRLPBF
- RS庫存編號:
- 218-3096
- 製造零件編號:
- IRF3710STRLPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD481.00
(不含稅)
TWD505.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
- 加上 4,480 件從 2026年1月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 190 | TWD48.10 | TWD481.00 |
| 200 - 390 | TWD46.80 | TWD468.00 |
| 400 + | TWD46.20 | TWD462.00 |
* 參考價格
- RS庫存編號:
- 218-3096
- 製造零件編號:
- IRF3710STRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.8W | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | EIA 418 | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Distrelec Product Id | 304-39-414 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.8W | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals EIA 418 | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Distrelec Product Id 304-39-414 | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
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