Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247
- RS庫存編號:
- 218-3083
- 製造零件編號:
- IPW60R017C7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD12,177.00
(不含稅)
TWD12,786.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD405.90 | TWD12,177.00 |
| 150 + | TWD393.80 | TWD11,814.00 |
* 參考價格
- RS庫存編號:
- 218-3083
- 製造零件編號:
- IPW60R017C7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and high performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased switching frequency
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