Infineon 600V CoolMOS CE Type N-Channel MOSFET, 3.7 A, 600 V, 3-Pin IPAK
- RS庫存編號:
- 218-3081
- 製造零件編號:
- IPU60R2K1CEAKMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 75 件)*
TWD727.50
(不含稅)
TWD763.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 8,775 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | TWD9.70 | TWD727.50 |
| 150 - 225 | TWD9.50 | TWD712.50 |
| 300 + | TWD9.20 | TWD690.00 |
* 參考價格
- RS庫存編號:
- 218-3081
- 製造零件編號:
- IPU60R2K1CEAKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | 600V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.1Ω | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 22W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.41 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series 600V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.1Ω | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 22W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.41 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ CE series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. This MOSFET is used in PFC stages, hard switching PWM stages and resonant switching stages.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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