Infineon 700V CoolMOSª P7 Type N-Channel MOSFET, 8.5 A, 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 25 件)*

TWD512.50

(不含稅)

TWD538.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 5,950 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
25 - 725TWD20.50TWD512.50
750 - 1475TWD20.00TWD500.00
1500 +TWD18.80TWD470.00

* 參考價格

包裝方式:
RS庫存編號:
218-3065
製造零件編號:
IPN70R600P7SATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Series

700V CoolMOSª P7

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

10.5nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

6.9W

Maximum Operating Temperature

150°C

Height

1.8mm

Standards/Approvals

No

Length

6.7mm

Width

3.7 mm

Automotive Standard

No

The Infineon 700V CoolMOS™ N-channel power MOSFET. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses (Eoss)

相關連結