Infineon OptiMOS-T Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IPD35N10S3L26ATMA1
- RS庫存編號:
- 218-3043
- 製造零件編號:
- IPD35N10S3L26ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD354.00
(不含稅)
TWD371.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 11,505 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 615 | TWD23.60 | TWD354.00 |
| 630 - 1230 | TWD23.10 | TWD346.50 |
| 1245 + | TWD22.70 | TWD340.50 |
* 參考價格
- RS庫存編號:
- 218-3043
- 製造零件編號:
- IPD35N10S3L26ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS-T | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS-T | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
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