Infineon 600V CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V N, 3-Pin TO-220
- RS庫存編號:
- 218-2998
- 製造零件編號:
- IPA60R160P6XKSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 50 件）*
TWD2,760.00
(不含稅)
TWD2,898.00
(含稅)
添加 50 件 件可免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD55.20 | TWD2,760.00 |
| 100 - 150 | TWD54.00 | TWD2,700.00 |
| 200 + | TWD52.80 | TWD2,640.00 |
* 參考價格
- RS庫存編號:
- 218-2998
- 製造零件編號:
- IPA60R160P6XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ N-channel power MOSFET. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. The extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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