Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V PQFN IRL80HS120
- RS庫存編號:
- 217-2640
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 20 件）*
TWD326.00
(不含稅)
TWD342.40
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD16.30 | TWD326.00 |
| 1000 - 1980 | TWD15.90 | TWD318.00 |
| 2000 + | TWD14.90 | TWD298.00 |
* 參考價格
- RS庫存編號:
- 217-2640
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 11.5W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 1 mm | |
| Height | 2.1mm | |
| Standards/Approvals | No | |
| Length | 2.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 11.5W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 1 mm | ||
Height 2.1mm | ||
Standards/Approvals No | ||
Length 2.1mm | ||
Automotive Standard No | ||
The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
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