Infineon HEXFET N-Channel MOSFET, 12.5 A, 80 V, 6-Pin PQFN IRL80HS120
- RS庫存編號:
- 217-2640
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 20 件)*
TWD696.00
(不含稅)
TWD730.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,820 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 980 | TWD34.80 | TWD696.00 |
| 1000 - 1980 | TWD33.90 | TWD678.00 |
| 2000 + | TWD31.70 | TWD634.00 |
* 參考價格
- RS庫存編號:
- 217-2640
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 11.5W | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.1mm | |
| Height | 2.1mm | |
| Standards/Approvals | No | |
| Width | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 11.5W | ||
Maximum Operating Temperature 175°C | ||
Length 2.1mm | ||
Height 2.1mm | ||
Standards/Approvals No | ||
Width 1mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 80V Maximum Drain Source Voltage, 12.5A Maximum Continuous Drain Current - IRL80HS120
This MOSFET is a Compact N-channel switching transistor designed for surface-mount power applications where controlled conduction and thermal endurance are required. It operates across a wide temperature range and is intended for use in Compact PQFN packages that balance power handling with a small footprint.
Features and Benefits:
• 80V maximum drain-source voltage enables high-voltage switching capability
• 42mΩ Rds(on) minimises conduction losses during heavy loads
• 12.5A continuous drain current supports sustained current delivery
• 7nC typical gate charge allows efficient gate-drive control
• 11.5W maximum power dissipation manages thermal stress in confined layouts
• 20V gate-source limit permits common gate-drive voltages safely
• 42mΩ Rds(on) minimises conduction losses during heavy loads
• 12.5A continuous drain current supports sustained current delivery
• 7nC typical gate charge allows efficient gate-drive control
• 11.5W maximum power dissipation manages thermal stress in confined layouts
• 20V gate-source limit permits common gate-drive voltages safely
Applications
• Suitable for DC-DC converters in Compact power supplies
• Ideal for motor driver stages requiring high-voltage switching
• Used for battery management circuits in power-dense designs
• Can be used for synchronous rectification in power rails
• Used with thermally demanding systems across wide temperature swings
• Ideal for motor driver stages requiring high-voltage switching
• Used for battery management circuits in power-dense designs
• Can be used for synchronous rectification in power rails
• Used with thermally demanding systems across wide temperature swings
What thermal range can it operate within?
It functions from -55°C up to 175°C, allowing use in high-temperature environments.
How many pins are available for PCB routing?
It is supplied in a six-pin PQFN layout to simplify surface-mount routing.
What is the forward voltage and its implication?
The forward voltage is 1.2V, which informs loss and drop calculations in conduction paths.
Which package and mounting style should designers expect?
The device is delivered in a PQFN package intended for surface mounting on Compact PCBs.
What channel type and switching role does it fulfil?
It is an N-channel device suited for low-side or high-side switching topologies depending on circuit requirements.
相關連結
- Infineon HEXFET Type N-Channel MOSFET 80 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
