Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V, 6-Pin PQFN
- RS庫存編號:
- 217-2639
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
可享批量折扣
小計（1 卷，共 4000 件）*
TWD42,800.00
(不含稅)
TWD44,960.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8,000 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 4000 - 16000 | TWD10.70 | TWD42,800.00 |
| 20000 + | TWD10.40 | TWD41,600.00 |
* 參考價格
- RS庫存編號:
- 217-2639
- 製造零件編號:
- IRL80HS120
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Maximum Power Dissipation Pd | 11.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1 mm | |
| Height | 2.1mm | |
| Standards/Approvals | No | |
| Length | 2.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Maximum Power Dissipation Pd 11.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 175°C | ||
Width 1 mm | ||
Height 2.1mm | ||
Standards/Approvals No | ||
Length 2.1mm | ||
Automotive Standard No | ||
The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
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