Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN IRFH8334TRPBF
- RS庫存編號:
- 217-2615
- 製造零件編號:
- IRFH8334TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD545.00
(不含稅)
TWD572.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,150 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 950 | TWD10.90 | TWD545.00 |
| 1000 - 1950 | TWD10.70 | TWD535.00 |
| 2000 + | TWD10.00 | TWD500.00 |
* 參考價格
- RS庫存編號:
- 217-2615
- 製造零件編號:
- IRFH8334TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.02mm | |
| Standards/Approvals | RoHS | |
| Height | 1.17mm | |
| Width | 4.98 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.2W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.02mm | ||
Standards/Approvals RoHS | ||
Height 1.17mm | ||
Width 4.98 mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate-drive voltage (called Logic level)
Industry standard surface-mount power package
相關連結
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN IRFH5015TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN IRFH8325TRPBF