製造零件編號

Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK

RS庫存編號:: 217-2537
製造零件編號:: IPL60R125P7AUMA1
製造商:: Infineon

Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD145,500.00

(不含稅)

TWD152,760.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月27日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD48.50	TWD145,500.00
15000 +	TWD47.00	TWD141,000.00

* 參考價格

RS庫存編號:: 217-2537
製造零件編號:: IPL60R125P7AUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	600V
	Series	IPL
	Package Type	ThinPAK
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	111W
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	8.8mm
	Width	8.8 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 600V
	Series IPL
	Package Type ThinPAK
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 111W
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 8.8mm
	Width 8.8 mm
	Automotive Standard No

Datasheet - IPL60R125P7AUMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Suitable for hard and soft switching(PFC and LLC)due to an outstanding  commutation ruggedness

Significant reduction of switching and conduction losses

Excellent ESD robustness > 2kV (HBM) for all products

Better RDS(on)/package products compared to competition enabled by a

low RDS(on)*A(below1Ohm*mm²)

Fully qualified acc. JEDEC for Industrial Applications

Infineon IPL Type N-Channel MOSFET, 27 A, 600 V Enhancement, 5-Pin ThinPAK

訂單超過 $1,300.00 免費送貨

相關連結