Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1
- RS庫存編號:
- 215-2518
- 製造零件編號:
- IPD80R900P7ATMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 215-2518
- 製造零件編號:
- IPD80R900P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series 800V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 6A Continuous Drain Current - IPD80R900P7ATMA1
This MOSFET is a high-voltage switching transistor designed for power conversion and energy-efficient switching in demanding environments. It operates across a wide temperature range and is supplied in a surface-mount package suited to compact board layouts, making it appropriate for industrial and power-electronics applications where robust voltage handling is required.
Features and Benefits:
• 800V drain rating enables high-voltage system switching
• 6A continuous drain current supports moderate load currents
• 900mΩ low on-resistance reduces conduction losses
• 15nC typical gate charge allows faster gate-drive response
• 45W maximum power dissipation handles substantial thermal stress
• Gate-source tolerance up to 20V accommodates common gate-drive voltages
• 6A continuous drain current supports moderate load currents
• 900mΩ low on-resistance reduces conduction losses
• 15nC typical gate charge allows faster gate-drive response
• 45W maximum power dissipation handles substantial thermal stress
• Gate-source tolerance up to 20V accommodates common gate-drive voltages
Applications
• Ideal for power supplies in high-voltage converters
• Used for switch-mode power-supply stage switching
• Suitable for industrial inverter front-ends
• Can be used for high-voltage motor-drive circuits
• Used with compact surface-mount assemblies on PCBs
• Used for switch-mode power-supply stage switching
• Suitable for industrial inverter front-ends
• Can be used for high-voltage motor-drive circuits
• Used with compact surface-mount assemblies on PCBs
What temperature extremes can it withstand in operation?
It is specified to function between -55°C and 150°C, covering low-temperature and elevated-junction applications.
How is it mounted to a PCB and what package does it use?
It is supplied in a TO-252 package intended for surface-mount assembly to save board area.
What conduction behaviour should I expect under load?
The device exhibits an on-resistance up to 900mΩ, influencing conduction losses and thermal design for continuous currents up to 6A.
What gate-drive requirements are necessary for safe operation?
The gate-source voltage rating is ±20V, and typical total gate charge is 15nC, informing your driver capability and switching energy budget.
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