Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1
- RS庫存編號:
- 215-2480
- 製造零件編號:
- IPA60R360P7SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD824.00
(不含稅)
TWD865.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,620 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 80 | TWD41.20 | TWD824.00 |
| 100 + | TWD40.00 | TWD800.00 |
* 參考價格
- RS庫存編號:
- 215-2480
- 製造零件編號:
- IPA60R360P7SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 22W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 22W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPA60R360P7SXKSA1
This MOSFET is a high-voltage switching transistor designed for power-conversion roles in demanding electronic systems. It operates across a wide temperature span and is built for through-hole mounting in conventional assembly workflows, providing a compact solution for circuits that require a robust N-channel enhancement device with a high drain-to-source voltage rating.
Features and Benefits:
• 600V drain tolerance enables high-voltage switching applications
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules
What package and mounting method does it use?
It is supplied in a TO-220 package and intended for through-hole mounting to provide secure mechanical and thermal connection.
What gate and thermal limits must a designer observe?
The gate may be driven up to 20V relative to source and the device should be cooled to handle up to 22W dissipation within its operating temperature range.
What temperature range can it tolerate during operation?
It is rated to operate across a low of -55°C up to a high of 150°C for a wide variety of thermal environments.
What conduction mode and channel type are provided?
The component is an N-channel enhancement-mode device suited to standard transistor switching topologies.
相關連結
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R280P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R180P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK