Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251

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小計(1 管,共 75 件)*

TWD1,867.50

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TWD1,960.50

(含稅)

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75 - 75TWD24.90TWD1,867.50
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300 +TWD22.20TWD1,665.00

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RS庫存編號:
214-9102
製造零件編號:
IPS60R800CEAKMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

74W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

17.2nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

6.22mm

Width

2.4 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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