Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1
- RS庫存編號:
- 214-9041
- 製造零件編號:
- IPD50R650CEAUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD427.50
(不含稅)
TWD449.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件從 2026年4月23日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD17.10 | TWD427.50 |
| 625 - 1225 | TWD16.70 | TWD417.50 |
| 1250 + | TWD16.40 | TWD410.00 |
* 參考價格
- RS庫存編號:
- 214-9041
- 製造零件編號:
- IPD50R650CEAUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 47W | |
| Forward Voltage Vf | 0.84V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 47W | ||
Forward Voltage Vf 0.84V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
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