Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0502NSIATMA1
- RS庫存編號:
- 214-8975
- 製造零件編號:
- BSC0502NSIATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 15 件)*
TWD360.00
(不含稅)
TWD378.00
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 1245 | TWD24.00 | TWD360.00 |
| 1260 - 2490 | TWD23.40 | TWD351.00 |
| 2505 + | TWD23.10 | TWD346.50 |
* 參考價格
- RS庫存編號:
- 214-8975
- 製造零件編號:
- BSC0502NSIATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.65V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.65V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
相關連結
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 34 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
