Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 5 件)*

TWD976.00

(不含稅)

TWD1,024.80

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 2,360 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
5 - 195TWD195.20TWD976.00
200 - 395TWD190.40TWD952.00
400 +TWD187.20TWD936.00

* 參考價格

包裝方式:
RS庫存編號:
214-8963
製造零件編號:
AUIRFSA8409-7TRL
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

523A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.69mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

305nC

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.54mm

Width

9.65 mm

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

Automotive Qualified

相關連結