Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
- RS庫存編號:
- 214-8950
- 製造零件編號:
- AUIRF7675M2TR
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD523.00
(不含稅)
TWD549.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,800 件從 2026年1月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1190 | TWD52.30 | TWD523.00 |
| 1200 - 2390 | TWD50.90 | TWD509.00 |
| 2400 + | TWD50.30 | TWD503.00 |
* 參考價格
- RS庫存編號:
- 214-8950
- 製造零件編號:
- AUIRF7675M2TR
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.74mm | |
| Width | 5.05 mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 0.74mm | ||
Width 5.05 mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Advanced Process Technology
175°C Operating Temperature
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