製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V, 3-Pin TO-263 IRFS7434TRLPBF

RS庫存編號:: 214-4462
製造零件編號:: IRFS7434TRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V, 3-Pin TO-263 IRFS7434TRLPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD485.00

(不含稅)

TWD509.20

訂單超過 $1,300.00 免費送貨

有庫存

690 件準備從其他地點送貨

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單位	每單位	每包*
10 - 190	TWD48.50	TWD485.00
200 - 390	TWD47.20	TWD472.00
400 +	TWD44.20	TWD442.00

* 參考價格

RS庫存編號:: 214-4462
製造零件編號:: IRFS7434TRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	320A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.6mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	294W
	Typical Gate Charge Qg @ Vgs	324nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 320A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.6mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 294W
	Typical Gate Charge Qg @ Vgs 324nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFS7434TRLPBF

This Infineon HEXFET Power MOSFET is optimized for broadest availability from distribution partners. It has softer body-diode compared to previous silicon generation

It is capable of being wave soldered

Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V, 3-Pin TO-263 IRFS7434TRLPBF

訂單超過 $1,300.00 免費送貨

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