Infineon 600V CoolMOS G7 SJ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF

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TWD162,800.00

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TWD170,940.00

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  • 2026年9月08日 發貨
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2000 - 8000TWD81.40TWD162,800.00
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RS庫存編號:
214-4425
製造零件編號:
IPT60R102G7XTMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

600V CoolMOS G7 SJ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

141W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Length

10.1mm

Width

10.58 mm

Height

2.4mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)

It enables best-in-class R DS(on) in smallest footprint

It has provided production cost reduction

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