Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220
- RS庫存編號:
- 214-4356
- 製造零件編號:
- IPA80R450P7XKSA1
- 製造商:
- Infineon
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TWD2,640.00
(不含稅)
TWD2,772.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 550 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD52.80 | TWD2,640.00 |
| 100 - 150 | TWD51.20 | TWD2,560.00 |
| 200 + | TWD49.70 | TWD2,485.00 |
* 參考價格
- RS庫存編號:
- 214-4356
- 製造零件編號:
- IPA80R450P7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.85mm | |
| Length | 10.68mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.85mm | ||
Length 10.68mm | ||
Automotive Standard No | ||
Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 11A Continuous Drain Current - IPA80R450P7XKSA1
This MOSFET is a high-voltage N-channel switching device designed for power conversion and industrial applications. It operates across a wide ambient range and is intended for through-hole mounting in conventional power assemblies, providing a robust option where elevated voltage handling and moderate current capability are required.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching applications
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies
What temperature range can it reliably operate within?
The device is specified to function from -55°C up to 150°C, supporting operation in both low-temperature and high-temperature environments.
How is it packaged for mounting and cooling?
It is supplied in a TO-220 package intended for through-hole mounting, permitting connection to heatsinks or chassis for thermal management.
What gate-drive considerations should be observed?
The maximum gate-source voltage is 30V and the typical total gate charge is 24nC, so driver selection should balance voltage headroom and drive strength to achieve the desired switching speed.
How does its conduction resistance affect design?
With a maximum drain-source on-resistance of 450mΩ, designers should account for conduction losses at expected currents and size heatsinking accordingly.
相關連結
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