DiodesZetex DMTH10H2M5STLW Type N-Channel MOSFET, 248 A, 100 V Enhancement, 8-Pin PowerDI1012
- RS庫存編號:
- 213-9225
- 製造零件編號:
- DMTH10H2M5STLW-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 1500 件)*
TWD177,900.00
(不含稅)
TWD186,795.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,500 件從 2026年1月12日 起發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 6000 | TWD118.60 | TWD177,900.00 |
| 7500 + | TWD115.00 | TWD172,500.00 |
* 參考價格
- RS庫存編號:
- 213-9225
- 製造零件編號:
- DMTH10H2M5STLW-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 248A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMTH10H2M5STLW | |
| Package Type | PowerDI1012 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230.8W | |
| Typical Gate Charge Qg @ Vgs | 124.4nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 11.68 mm | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 248A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMTH10H2M5STLW | ||
Package Type PowerDI1012 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230.8W | ||
Typical Gate Charge Qg @ Vgs 124.4nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 11.68 mm | ||
Length 9.9mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
The DiodesZetex DMTH10H2M5STLW series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
High conversion efficiency
Wet table flank for improved optical inspection
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