DiodesZetex DMT4008LFDF Type N-Channel MOSFET, 11.8 A, 40 V Enhancement, 6-Pin UDFN
- RS庫存編號:
- 213-9207
- 製造零件編號:
- DMT4008LFDF-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD28,800.00
(不含稅)
TWD30,240.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD9.60 | TWD28,800.00 |
| 6000 + | TWD9.30 | TWD27,900.00 |
* 參考價格
- RS庫存編號:
- 213-9207
- 製造零件編號:
- DMT4008LFDF-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMT4008LFDF | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMT4008LFDF | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.6mm | ||
Automotive Standard No | ||
The DiodesZetex DMT4008LFDF series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low gate threshold voltage
Fast switching speed
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