DiodesZetex DMT35M4LFVW Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerDI3333
- RS庫存編號:
- 213-9205
- 製造零件編號:
- DMT35M4LFVW-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD13,000.00
(不含稅)
TWD13,640.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD6.50 | TWD13,000.00 |
| 4000 + | TWD6.30 | TWD12,600.00 |
* 參考價格
- RS庫存編號:
- 213-9205
- 製造零件編號:
- DMT35M4LFVW-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT35M4LFVW | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.1nC | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT35M4LFVW | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.1nC | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMT35M4LFVW series is N-channel MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching
Test in production – ensures more reliable and robust end application
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