DiodesZetex DMN3060LW Type N-Channel MOSFET, 2.6 A, 30 V Enhancement, 3-Pin SOT-323 DMN3060LW-7
- RS庫存編號:
- 213-9176
- 製造零件編號:
- DMN3060LW-7
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 100 件)*
TWD480.00
(不含稅)
TWD504.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8,900 件從 2025年12月26日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 700 | TWD4.80 | TWD480.00 |
| 800 - 1400 | TWD4.70 | TWD470.00 |
| 1500 + | TWD4.60 | TWD460.00 |
* 參考價格
- RS庫存編號:
- 213-9176
- 製造零件編號:
- DMN3060LW-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-323 | |
| Series | DMN3060LW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Maximum Power Dissipation Pd | 0.64W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-323 | ||
Series DMN3060LW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Maximum Power Dissipation Pd 0.64W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1.1mm | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN3060LW series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
Low input capacitance
Fast switching speed
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