Vishay SQJA66EP_RC Type N-Channel MOSFET, 75 A, 60 V Enhancement, 4-Pin SO-8 SQJA66EP-T1_GE3
- RS庫存編號:
- 210-5051
- 製造零件編號:
- SQJA66EP-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD395.00
(不含稅)
TWD414.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月05日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD39.50 | TWD395.00 |
| 750 - 1490 | TWD38.50 | TWD385.00 |
| 1500 + | TWD38.00 | TWD380.00 |
* 參考價格
- RS庫存編號:
- 210-5051
- 製造零件編號:
- SQJA66EP-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJA66EP_RC | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64.9nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJA66EP_RC | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64.9nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
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