Vishay SiR680LDP Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 210-5002
- 製造零件編號:
- SIR680LDP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD118,500.00
(不含稅)
TWD124,440.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD39.50 | TWD118,500.00 |
| 6000 + | TWD38.30 | TWD114,900.00 |
* 參考價格
- RS庫存編號:
- 210-5002
- 製造零件編號:
- SIR680LDP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiR680LDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiR680LDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 130 A drain current.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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