製造零件編號

Texas Instruments NexFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin VSONP

RS庫存編號:: 208-8481
製造零件編號:: CSD18543Q3A
製造商:: Texas Instruments

Texas Instruments NexFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin VSONP

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD31,750.00

(不含稅)

TWD33,350.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月07日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 10000	TWD12.70	TWD31,750.00
12500 +	TWD12.40	TWD31,000.00

* 參考價格

RS庫存編號:: 208-8481
製造零件編號:: CSD18543Q3A
製造商:: Texas Instruments

規格

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Texas Instruments
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	60V
	Series	NexFET
	Package Type	VSONP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	66W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.1nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Width	3.1 mm
	Length	3.25mm
	Height	0.9mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Texas Instruments
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 60V
	Series NexFET
	Package Type VSONP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 66W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.1nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Width 3.1 mm
	Length 3.25mm
	Height 0.9mm
	Standards/Approvals No
	Automotive Standard No

Texas Instruments NexFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin VSONP

訂單超過 $1,300.00 免費送貨

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