DiodesZetex DMTH43 N-Channel MOSFET, 24 A, 40 V Enhancement, 8-Pin PowerDI3333 DMTH43M8LFG-7
- RS庫存編號:
- 206-0164
- 製造零件編號:
- DMTH43M8LFG-7
- 製造商:
- DiodesZetex
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查看批量定價選項小計（1 包，共 25 件）*
TWD875.00
(不含稅)
TWD918.75
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年9月27日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 475 | TWD35.00 | TWD875.00 |
| 500 - 975 | TWD34.00 | TWD850.00 |
| 1000 + | TWD33.50 | TWD837.50 |
* 參考價格
- RS庫存編號:
- 206-0164
- 製造零件編號:
- DMTH43M8LFG-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333 | |
| Series | DMTH43 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.62W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 40.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 3.25mm | |
| Standards/Approvals | No | |
| Width | 3.25mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333 | ||
Series DMTH43 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.62W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 40.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 3.25mm | ||
Standards/Approvals No | ||
Width 3.25mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.62 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
Rated to +175°C ideal for high ambient temperature environment
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