DiodesZetex DMTH10 Type N-Channel MOSFET, 20.1 kA, 100 V Enhancement, 8-Pin PowerDI5060
- RS庫存編號:
- 206-0158
- 製造零件編號:
- DMTH10H4M5LPS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD122,500.00
(不含稅)
TWD128,625.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD49.00 | TWD122,500.00 |
| 5000 + | TWD47.60 | TWD119,000.00 |
* 參考價格
- RS庫存編號:
- 206-0158
- 製造零件編號:
- DMTH10H4M5LPS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20.1kA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI5060 | |
| Series | DMTH10 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.7W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20.1kA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI5060 | ||
Series DMTH10 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.7W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V,8 pin N-channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, this device is ideal for use in notebook battery power management and load switch. Its gate-source voltage is 20V with 2.7 W thermal power dissipation.
Low on-resistance
Fast switching speed
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