DiodesZetex DMT616 Type N-Channel MOSFET, 10 A, 60 V Enhancement, 8-Pin SO-8 DMT616MLSS-13
- RS庫存編號:
- 206-0157
- 製造零件編號:
- DMT616MLSS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD357.50
(不含稅)
TWD375.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,650 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD14.30 | TWD357.50 |
| 625 - 1225 | TWD14.00 | TWD350.00 |
| 1250 + | TWD13.80 | TWD345.00 |
* 參考價格
- RS庫存編號:
- 206-0157
- 製造零件編號:
- DMT616MLSS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | DMT616 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.39W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.4mm | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series DMT616 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.39W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.4mm | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 1.39 W thermal power dissipation.
Fast switching speed
Low input capacitance
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