DiodesZetex DMT6006 Type N-Channel MOSFET, 98 A, 60 V Enhancement, 8-Pin PowerDI5060
- RS庫存編號:
- 206-0148
- 製造零件編號:
- DMT6006SPS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD38,750.00
(不含稅)
TWD40,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年4月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD15.50 | TWD38,750.00 |
| 5000 + | TWD15.00 | TWD37,500.00 |
* 參考價格
- RS庫存編號:
- 206-0148
- 製造零件編號:
- DMT6006SPS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMT6006 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27.9nC | |
| Maximum Power Dissipation Pd | 2.45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMT6006 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27.9nC | ||
Maximum Power Dissipation Pd 2.45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.45 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
相關連結
- DiodesZetex DMT6006 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060 DMT6006SPS-13
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI5060-8
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI5060-8 DMT6011LPDW-13
- DiodesZetex DMTH61M8SPSQ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060-8
- DiodesZetex DMT61M8SPS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex DMTH61M8SPSQ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060 DMTH61M8SPSQ-13
- DiodesZetex DMT61M8SPS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060 DMT61M8SPS-13