DiodesZetex DMP31 Type P-Channel MOSFET, 380 mA, 30 V Enhancement, 3-Pin SOT-323
- RS庫存編號:
- 206-0124
- 製造零件編號:
- DMP31D7LW-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD220.00
(不含稅)
TWD231.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD4.40 | TWD220.00 |
| 750 - 1450 | TWD4.20 | TWD210.00 |
| 1500 + | TWD4.20 | TWD210.00 |
* 參考價格
- RS庫存編號:
- 206-0124
- 製造零件編號:
- DMP31D7LW-7
- 製造商:
- DiodesZetex
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 380mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMP31 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.29W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.9mm | |
| Width | 1.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 380mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMP31 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.29W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.9mm | ||
Width 1.8 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 0.29 W thermal power dissipation.
Low on-resistance
Low input capacitance
ESD protected gate
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