Vishay SiHA125N60EF N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220 SIHA125N60EF-GE3

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RS庫存編號:
204-7241
製造零件編號:
SIHA125N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SiHA125N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

31nC

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

4.3mm

Length

28.1mm

Width

9.7mm

Standards/Approvals

No

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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