STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6
- RS庫存編號:
- 202-5547
- 製造零件編號:
- STW70N65DM6
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 件）*
TWD439.00
(不含稅)
TWD460.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 442 件從 2026年1月05日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 + | TWD439.00 |
* 參考價格
- RS庫存編號:
- 202-5547
- 製造零件編號:
- STW70N65DM6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 450W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 450W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Height 41.2mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
相關連結
- STMicroelectronics ST Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4
- STMicroelectronics ST Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247
- STMicroelectronics ST Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247 STWA70N65DM6
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 3-Pin TO-247
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247