STMicroelectronics ST N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263
- RS庫存編號:
- 202-5496P
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計 250 件 (以卷裝提供)*
TWD56,125.00
(不含稅)
TWD58,930.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 996 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 250 - 498 | TWD224.50 |
| 500 + | TWD220.50 |
* 參考價格
- RS庫存編號:
- 202-5496P
- 製造零件編號:
- STB33N60DM6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | ST | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.85mm | |
| Width | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series ST | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 150°C | ||
Height 15.85mm | ||
Width 4.6mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Extremely high dv/dt ruggedness
Zener-protected
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