onsemi NTMJS1D4N06CL Type N-Channel MOSFET, 262 A, 60 V Enhancement, 8-Pin LFPAK
- RS庫存編號:
- 201-3408
- 製造零件編號:
- NTMJS1D4N06CLTWG
- 製造商:
- onsemi
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可享批量折扣
小計（1 包，共 10 件）*
TWD714.00
(不含稅)
TWD749.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD71.40 | TWD714.00 |
| 750 - 1490 | TWD69.50 | TWD695.00 |
| 1500 + | TWD68.50 | TWD685.00 |
* 參考價格
- RS庫存編號:
- 201-3408
- 製造零件編號:
- NTMJS1D4N06CLTWG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 262A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NTMJS1D4N06CL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 103nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5mm | |
| Length | 4.9mm | |
| Width | 1.3 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 262A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NTMJS1D4N06CL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 103nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 5mm | ||
Length 4.9mm | ||
Width 1.3 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 60V N-channel MOSFET has industrial power in a 5x6mm is used for compact and efficient design and including high thermal performance and it is also these device are Pb-free and are RoHS compliant.
Low minimize conduction losses
Low QG and capacitance to minimize driver losses
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