SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances

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